View DU28120V_4990229.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DU28120V
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * *
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 12 250 200 -55 to +150 0.7 Units V V A W C C C/W
TYPICAL DEVICE IMPEDANCE
F (MHz) 30 50 100 ZIN () 3.0 - j12.5 1.5 - j8.5 1.0 - j6.0 ZLOAD () 8.0 + j6.0 7.0 +j6.5 6.5 + j5.0
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
VDD = 28V, IDQ = 600mA, POUT = 120 W
ELECTRICAL CHARACTERISTICS AT 25C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP D RL VSWR-T Min 65 2.0 3.0 13 60 10 Max 6.0 6.0 6.0 270 240 48 30:1 Units V mA A V S pF pF pF dB % % Test Conditions VGS = 0.0 V , IDS = 3.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 600.0 mA VDS = 10.0 V , IDS = 6000.0 mA , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120V
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W EFFICIENCY VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W
M/A-COM Products Released; RoHS Compliant
25
70 65 60 55 50
20 GAIN (dB)
15
10 0 50 150 200
EFFICIENCY (%)
0
25
50
100
150
175
200
FREQUENCY (MHz)
FREQUENCY (MHz)
140 POWER OUTPUT (W) 120 100 80 60 40
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA
POWER OUTPUT (W)
30MHz 175MHz
140 120 100 80 60 40 20
POWER OUTPUT VS SUPPLY VOLTAGE F=175 MHz IDQ =600 mA PIN =3.0 W
100MHz
20 0.1 0.2 0.3
1
2
3
4
5
6
7
8
9
16
POWER INPUT (W)
20 25 SUPPLY VOLTAGE (V)
30
33
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120V
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products Released; RoHS Compliant
TEST FIXTURE ASSEMBLY
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

▲Up To Search▲

Price & Availability of DU28120V

	To Download DU28120V Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .